掺杂剂
纳米尺度
半导体
偏压
材料科学
光电子学
次级电子
对比度(视觉)
放大倍数
电压
电子
能量(信号处理)
半导体器件
纳米技术
图层(电子)
光学
兴奋剂
物理
量子力学
作者
Daisuke Tsurumi,K. Hamada,Yuji Kawasaki
标识
DOI:10.1143/jjap.51.106503
摘要
We observed the dopant contrast of an InP structure with magnifications as high as 250,000 by simultaneously applying secondary electron energy-filtering and a reverse bias voltage. The detection modes without energy-filtering and without a bias voltage did not generate a clear contrast. This was because the reverse bias increased the contrast and relatively decreased the sensitivity to the contamination layer while the energy-filtering reduced the influence of the contamination layer, even at a high magnification. This method can be widely used for semiconductor devices and enables practical nanoscale dopant mapping with a high data acquisition rate, and is therefore expected to greatly assist in extending the frontiers of the semiconductor industry.
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