STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt—TiO<SUB>2</SUB> AND Pt-ZnO

Electric property across the pt film-tio2 and pt film-zno interface was characterized by the i-v curves. it was seen clearly that by h-2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact.