电致伸缩
电场
材料科学
电介质
凝聚态物理
蓝宝石
压电
异质结
纳米技术
光电子学
复合材料
光学
物理
量子力学
激光器
作者
Nini Pryds,Haiwu Zhang,Dae‐Sung Park,Nicolas Gauquelin,Simone Santucci,Dennis Valbjørn Christensen,Daen Jannis,Д. С. Чезганов,Diana Rata,Ivano E. Castelli,Johan Verbeeck,Igor Lubomirsky,Paul Muralt,Dragan Damjanović,Vincenzo Esposito
出处
期刊:Research Square - Research Square
日期:2021-06-24
标识
DOI:10.21203/rs.3.rs-615182/v1
摘要
Abstract Electrostriction is a property of all the dielectric materials where an applied electric field induces a mechanical deformation proportional to the square of the electric field. The magnitude of the effect is usually minuscule. However, recent discoveries of symmetry-breaking phenomena at interfaces opens up the possibility to extend the electrostrictive response to a broader family of dielectric materials.1,2 Here, we engineer the electrostrictive effect by epitaxially depositing alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. We find that the electrostriction coefficient reaches 2.38×10-14 m2/V2, exceeding the best-known relaxor ferroelectrics by three orders of magnitude. Our atomic-scale calculations show that the extraordinary electrostriction coefficient is driven by the coherent strain imparted by the interfacial lattice mismatches. Thus, artificial heterostructures open a new avenue to design and manipulate electrostrictive materials and devices for nano/micro actuation and cutting-edge sensor applications.
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