碲化镉光电
光伏系统
太阳能电池
材料科学
光电子学
图层(电子)
纳米技术
电气工程
工程类
作者
Nitesh Kumar Singh,Anshul Agarwal,Tirupathiraju Kanumuri
标识
DOI:10.36909/jer.emsme.13879
摘要
A thin film based Cadmium Telluride photovoltaic cell is becoming highly competitive in the electric power industry. The major problem with the CdTe photovoltaic cell is the large barrier height behind the rear contact surface that prevents the solar cell to reach notional efficiency of 32%. A buffer layer is added to get a better result in terms of efficiency by reducing the valence barrier height at the rear contact surface of the CdTe photovoltaic cell. This manuscript presents the numerical simulation and optimization of ITO/TiO2/CdS/CdTe/MoS2/Au original photovoltaic cell structure using SCAPS 1D software. Furthermore, the effect of CdTe thickness, defect density, and acceptor density of MoS2 layer is discussed. Simulation results show that with the optimization of layer and parameters of the photovoltaic cell, efficacy of the p hotovoltaic cell is quite improved. With optimized solar cell, efficiency is improved to 26.49%, Voc = 1.141 V, Jsc = 27.690 mA/cm2, FF = 83.80% as compared to basic CdTe model which has an efficiency of 21.69%.
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