光伏系统
电力电子
电气工程
转换器
变压器
计算机科学
数码产品
氮化镓
碳化硅
汽车工程
电子工程
材料科学
电压
工程类
图层(电子)
冶金
复合材料
作者
Daniel W. Cunningham,E.P. Carlson,Joseph S. Manser,I.C. Kizilyalli
标识
DOI:10.1109/jphotov.2019.2950592
摘要
The emergence of electrical conversion technologies utilizing silicon carbide and gallium nitride switches and diodes will enable the development of a whole new class of efficient, lightweight, and reliable power electronics based on wide band gap semiconductors for photovoltaic (PV) systems. This article presents the results of a study to model the value proposition of these devices when they are used in dc-ac inverters, medium voltage dc-dc converters, as well as solid state breakers and transformers. The conclusions illustrate the beneficial impact on energy generation, operation and maintenance, plant architecture simplification, and associated reduction in capital cost and levelized cost of electricity that these new solid state devices will enable for the future PV system developer.
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