原子层沉积
材料科学
沉积(地质)
图层(电子)
硅
二氧化硅
热的
氧气
分析化学(期刊)
光电子学
纳米技术
化学
复合材料
环境化学
有机化学
气象学
古生物学
物理
生物
沉积物
作者
Hua Hsuan Chen,Susumu Toko,Daisuke Ohori,Tomonobu Ozaki,Mitsuya Utsuno,Tomohiro Kubota,Toshihisa Nozawa,Seiji Samukawa
标识
DOI:10.1088/1361-6463/ab484d
摘要
A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.
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