薄膜晶体管
无定形固体
材料科学
锌
分析化学(期刊)
铟
镁
光电子学
核化学
纳米技术
化学
结晶学
图层(电子)
有机化学
冶金
作者
Hao Peng,Biao Chang,Haishi Fu,Huan Yang,Yuqing Zhang,Xiaoliang Zhou,Lei Lü,Shengdong Zhang
标识
DOI:10.1109/ted.2020.2975211
摘要
Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The highconductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about 4 x 10 -3 Ωcm from over 10 4 Ωcm with a 36-s Mg deposition at 300 °C. The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation-reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a field-effect mobility of 19.5 cm 2 V -1 s -1 , a subthreshold swing of 0.19 V/dec, an ON -/ OFF -current ratio of over 10 9 , a low S/D series resistance of 2.1 Ωcm, a small channel length shrinking of around 0.1 μm, and a high stability against electrical stresses.
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