钝化
原子层沉积
材料科学
氮化硅
钛
图层(电子)
硅
等离子体
电阻率和电导率
沉积(地质)
电导率
表面电导率
化学工程
作者
Eun-Jin Song,Hyunjin Jo,Se-Hun Kwon,Ji-Hoon Ahn,Jung-Dae Kwon
标识
DOI:10.1016/j.tsf.2019.137752
摘要
Abstract For achieving improved electrical conductivity through surface passivation of crystalline silicon, we investigated TiON films by combining TiO2 and TiN deposition cycles in plasma-enhanced atomic layer deposition. To control the composition of the TiON films, a super-cycle—composed of one cycle of TiO2 and x-cycles of TiN—was adopted. The thickness of the films could be precisely controlled on the nanometer and sub-nanometer scale, regardless of the TiO2:TiN sub-cycle ratio. The chemical state, crystalline phase, and interface characteristics of the TiON films were examined. For the TiO2:TiN = 1:20 film, the carrier lifetime was increased from 30 to 243 μs, while the resistivity decreased from 3.1 × 108 to 7.1 × 10 − 1 Ω•cm compared to the TiO2 film.
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