单层
密度泛函理论
肖特基势垒
带隙
费米能级
材料科学
半导体
凝聚态物理
电子
量子隧道
费米能量
过渡金属
纳米技术
化学
光电子学
计算化学
物理
生物化学
量子力学
二极管
催化作用
作者
Mohammad Rezwan Habib,Shengping Wang,Sk Md Obaidulla,Yahya Khan,Xiaodong Pi,Mingsheng Xu
标识
DOI:10.1002/pssb.201800597
摘要
Limited calculations show that monolayer (ML) chromium dichalcogenide (CrS 2 ) has a direct bandgap and valley polarization but with a smaller bandgap than ML MoS 2 and with distinct piezoelectric and ferromagnetic properties. It is highly desirable to determine an appropriate metal contact for novel two‐dimensional (2D) CrS 2 ‐based devices. By using density functional theory (DFT), the interface between ML CrS 2 and commonly used metals, including s ‐electron and d ‐electron metals, is studied systematically by evaluating the binding energy, Schottky barrier, orbital overlap, and tunneling barrier at the interfaces. The d ‐electron metals show higher binding energy with the ML CrS 2 than the s ‐electron metals, which is due to the different occupancy and position of the d ‐band of the metals. A strong Fermi level pinning is found in the metal–CrS 2 contacts. Both n‐type and quasi p‐type phenomena for CrS 2 with respect to pristine CrS 2 can be produced at the CrS 2 contacts with the metals. The higher overlap states between the CrS 2 and Ti result in a higher minimum electron density at the Schottky interface, suggesting that Ti is the best contact among the investigated metals for use in CrS 2 ‐based devices for efficient electron injection. The DFT results provide a guideline that is invaluable for experimentally designing novel 2D CrS 2 semiconductor devices.
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