材料科学
光电子学
电压
击穿电压
阈值电压
功率(物理)
晶体管
功率半导体器件
电气工程
MOSFET
功率MOSFET
高压
逻辑门
作者
N.-Q. Zhang,Brendan Jude Moran,Steven P. DenBaars,Umesh Mishra,X.W. Wang,T.P. Ma
出处
期刊:International Electron Devices Meeting
日期:2001-12-02
卷期号:: 589-592
被引量:75
标识
DOI:10.1109/iedm.2001.979575
摘要
As a competitive candidate for power switching electronics, GaN has slightly wider bandgap, higher electric strength, and higher saturated velocity than SiC. An insulating-gate structure GaN HEMT with a breakdown voltage of 1.3 kV was fabricated with a specific on-resistance of 1.7 m/spl Omega/.cm/sup 2/. State-of-the-art power device figure of merit of V/sub BR//sup 2//R/sub on/= 9.94/spl times/10/sup 8/ [V/sup 2//spl middot//spl Omega//sup -1/ cm/sup -2/] was achieved on this device. Device analysis shows that the surface traps play a dominant role in breakdown voltage and switching speed. High switching speed was realized on the kilo-volts devices by adoption of double gate dielectrics.
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