光电流
响应度
异质结
紫外线
光电探测器
光电子学
材料科学
纳米线
光电导性
紫外线
可见光谱
作者
Mingrui Luo,Jimei Song,Jialin Wang,Xingchen Pan,Huasheng Hong,R. Nötzel
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2022-11-01
卷期号:12 (11)
被引量:4
摘要
An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu2O core–shell nanowire p–n heterojunctions is demonstrated. The photocurrent under solar light is 2–3 times larger than that for GaN nanowires. The photocurrents under the solar light and the ultraviolet light fraction are comparable, 100 µA/cm2 photocurrent density. The photocurrent under the broad visible light part is about 3% of that under solar light. The responsivity and specific detectivity reach 961.5 µA/W and 5.35 × 109 Jones under ultraviolet light, respectively. The rise/fall times are 42/65 ms. This is understood by efficient photocarrier separation, hole collection, and transport in the near-surface GaN/Cu2O p–n heterojunction.
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