Design Methodology of a Voltage Bandgap Reference with High PSRR in Advanced Technology Nodes for LDO Application

This paper presents and details a generalized approach in designing a voltage bandgap reference developed in advanced technology nodes. As circuits for different devices keeps on scaling down, contrasting fabrication technologies are developed. This is for the purpose of optimizing distinct design parameters while keeping in check the tradeoffs involved. This in turn keeps pushing the boundaries of integrated circuit design. The voltage bandgap reference is one of many important circiuts that is being integrated to many circuit topologies. Its ability to be temperature-independent is a valuable asset to other circuit blocks like low-dropout volage regulators as well as in devices which incorporate wireless technologies and ADC subsytems. Different subblocks of the voltage bandgap reference, such as the cascode current mirror, operational amplifier, and start-up circuit, are investigated. Its Power Supply Rejection Ratio or PSRR is closely monitored and improved through the use of frequency compensation capacitor. Its operating supply voltage is 2.5 V, and it has a temperature coefficient of 58.3 ppm/°C and a nominal reference voltage of 1.205 V. Process corner simulations in SS, FF and TT corners are processed accordingly, in parallel with Monte Carlo Analysis, having commendable results. Its PSRR is -84.21 dB in TT corner which indicates good noise immunity from the supply rail to protect its preceding subcircuits.