Rational high-entropy doping strategy via modular in situ /post solvothermal doping integration for microwave absorption

Doping strategies have been widely demonstrated as effective approaches to tailor microwave absorption properties in various material systems. However, achieving high-entropy doping (HED) in MoS2 while minimizing phase ratio interference, effectively integrating multiple transition metal element substitutions, and elucidating the underlying absorption mechanisms remain significant challenges. In this work, we develop a modular in situ/post solvothermal doping process to realize the cooperative incorporation of multiple dopants into a metallic-phase MoS2 (1T-MoS2) host. For the first time, we systematically investigate the effects of multiple-element codoping, including high-density lattice strain, crystalline defects, localized charge accumulation, and redistribution, which significantly increase dipole polarization loss. Owing to the balanced impedance characteristics and coordinated polarization/conductive losses enabled by HED engineering, the WVNbTaRu-MoS2 sample achieves a broadband effective absorption bandwidth of 7.65 GHz, which is more than double that of its undoped counterparts. Through combinatorial screening, we proposed 31 feasible doping configurations and experimentally validated 9 variants, establishing a foundational framework for designing advanced MoS2-based absorbers with tailored electromagnetic properties. This study provides innovative insights and pathways for the rational design of high-performance transition metal dichalcogenide-based microwave absorbers.