On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Abstract The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO 2 . In this work, we present results of a comprehensive reliability evaluation of Hf 0.5 Zr 0.5 O 2 -based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.