Templated growth strategy for highly ordered topological ferroelectric quad-domain textures

Topological quad-domain textures in ferroelectric nanoislands have been considered as enablers for nanoelectric devices. However, the fabrication of ordered arrays of ferroelectric islands exhibiting this domain structure is a challenge. By using substrate patterning to create nucleation sites, highly ordered quad-domain ferroelectric polarization configurations were achieved in BiFeO3 nanoisland arrays. Reversible switching of the quad-domain between the center divergent state with highly conductive domain walls and the center convergent state with insulating domain walls can be realized, resulting in a resistance change with a large on/off ratio. This templated growth strategy enables the controllable fabrication of exotic topological domains and sheds light on their applications for configurable electronic devices.