Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors

The big data era requires ultrafast, low-power, and silicon-compatible materials and devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO₂/Hf_0.5Zr_0.5O₂ composite barrier and both conducting electrodes are designed and fabricated on Si substrates. The FTJ achieves the fastest write speed of 500 ps under 5 V (2 orders of magnitude faster than reported silicon-compatible FTJs) or 10 ns speed at a low voltage of 1.5 V (the lowest voltage among FTJs at similar speeds), low write current density of 1.3 × 10⁴ A cm^-2, 8 discrete states, good retention > 10⁵ s at 85 °C, and endurance > 10⁷. In addition, it provides a large read current (88 A cm^-2) at 0.1 V, 2 orders of magnitude larger than reported FTJs. Interestingly, in FTJ-based synapses, gradually tunable conductance states (128 states) with high linearity (<1) are obtained by 10 ns pulses of <1.2 V, and a high accuracy of 91.8% in recognizing fashion product images is achieved by online neural network simulations. These results highlight that silicon-compatible HfO₂-based FTJs are promising for high-performance nonvolatile memories and electrical synapses.