单片微波集成电路
低噪声放大器
平坦度(宇宙学)
宽带
噪声系数
线性
高电子迁移率晶体管
Y系数
放大器
电子工程
电气工程
计算机科学
工程类
晶体管
电信
物理
CMOS芯片
宇宙学
量子力学
电压
作者
Qian Lin,Sheng‐Ming Yang,Xiaozheng Wang,Li-Ning Jia,Haifeng Wu,Mei-Qian Wang
标识
DOI:10.1109/icmmt58241.2023.10276426
摘要
A monolithic microwave integrated circuit (MMIC) low noise amplifier(LNA) is designed in this paper. It can obtain the low noise and high linearity with a broadband gain flatness. In order to verify this design, this LNA are tested at different temperatures. The results show that its S-parameters, P1dB, noise figure (NF) and output third-order intersection point (OIP3) all degrade with the increase of temperature. That is to say it is sensitive to temperature changes. Thus, this research results of this paper can provide some useful guidance for the MMIC design.
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