神经形态工程学
长时程增强
MNIST数据库
仿真
材料科学
人工神经网络
记忆电阻器
计算机科学
峰值时间相关塑性
突触重量
电阻随机存取存储器
神经科学
人工智能
电压
电子工程
电气工程
工程类
经济增长
生物
经济
受体
化学
生物化学
作者
Prabana Jetty,Kannan Udaya Mohanan,S. Narayana Jammalamadaka
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-11-10
卷期号:35 (7): 075701-075701
被引量:10
标识
DOI:10.1088/1361-6528/ad0bd1
摘要
Abstract In this manuscript, we report on the paramagnetic Ho 2 O 3 -based synaptic resistive random-access memory device for the implementation of neuronal functionalities such as long-term potentiation, long-term depression and spike timing dependent plasticity respectively. The plasticity of the artificial synapse is also studied by varying pulse amplitude, pulse width, and pulse interval. In addition, we could classify handwritten Modified National Institute of Standards and Technology data set (MNIST) using a fully connected neural network (FCN). The device-based FCN records a high classification accuracy of 93.47% which is comparable to the software-based test accuracy of 97.97%. This indicates the highly optimized behavior of our synaptic device for hardware neuromorphic applications. Successful emulation of Pavlovian classical conditioning for associative learning of the biological brain is achieved. We believe that the present device consists the potential to utilize in neuromorphic applications.
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