离解(化学)
化学
氧气
电子
空位缺陷
扫描隧道显微镜
离子
吸附
原子物理学
光化学
分析化学(期刊)
化学物理
结晶学
物理化学
纳米技术
材料科学
量子力学
物理
有机化学
色谱法
作者
Junseok Lee,Dan C. Sorescu,Xingyi Deng
摘要
The electron-induced dissociation of CO2 adsorbed at the oxygen vacancy defect on the TiO2(110) surface has been investigated at the single-molecular level using scanning tunneling microscopy (STM). Electron injection from the STM tip into the adsorbed CO2 induces the dissociation of CO2. The oxygen vacancy defect is found to be healed by the oxygen atom released during the dissociation process. Statistical analysis shows that the dissociation of CO2 is one-electron process. The bias-dependent dissociation yield reveals that the threshold energy for electron-induced dissociation of CO2 is 1.4 eV above the conduction-band minimum of TiO2. The formation of a transient negative ion by the injected electron is considered to be the key process in CO2 dissociation.
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