外延
竞赛(生物学)
工程物理
纳米技术
透视图(图形)
材料科学
工程类
图层(电子)
计算机科学
生态学
生物
人工智能
作者
Albert A. Burk,Michael J. O’Loughlin,D. Tsvetkov,S. A. Ustin
标识
DOI:10.1002/9783527824724.ch4
摘要
As the title states, this book chapter attempts to provide an industrial perspective of SiC epitaxy. As elaborated below, this a challenging endeavor as the field is still rapidly evolving with very competition-sensitive developments for increasing SiC layer quality, uniformity, and throughput. The current state of the art in epitaxy has been enabled by many years of research, development, and applied engineering experience. Of course, these areas can only be touched upon here given the finite size of a book chapter. Fortunately, the provided references and companion chapter on some of the more theoretical aspects of SiC epitaxy written by Dr. Birgit Kallinger of Fraunhofer University provide an excellent launching point for the reader.
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