多孔硅
微分脉冲伏安法
铋
硫利达嗪
材料科学
硅
检出限
电化学气体传感器
纳米结构
纳米颗粒
蚀刻(微加工)
电化学
循环伏安法
多孔性
分析化学(期刊)
纳米技术
电极
化学
光电子学
色谱法
冶金
复合材料
物理化学
内分泌学
医学
氯丙嗪
图层(电子)
作者
Ali A. Ensafi,Pardis Hedayati,Mehdi Mokhtari Abarghoui,Behzad Rezaei
标识
DOI:10.1002/elan.201700291
摘要
Abstract A bismuth@porous silicon (Bi/PSi) nanostructure is fabricated and used as a new highly sensitive electrochemical sensor for measurement of thioridazine. For this purpose, commercial silicon powder is converted to porous silicon using metal‐assisted chemical etching method. Then, bismuth nanoparticles are deposited on the surface of the porous silicon that synthesized in the previous step. The effects of pH and instrumental parameters are studied on the sensor response. After optimization of the parameters, differential pulse voltammetry is used to determine sub‐micro molar amounts of thioridazine. The Linear region of the electrochemical sensor is in the range of 0.1 to 260 μmol L −1 thioridazine with a detection limit of 0.03 μmol L −1 , when Bi/PSi/CNTPE is used as an electrochemical sensor. The precision and accuracy of the sensor is evaluated. The Bi/PSi/CNTPE is used as an appropriated tool for accurate measurement of low amounts of thioridazine in real samples with satisfactory results.
科研通智能强力驱动
Strongly Powered by AbleSci AI