雪崩光电二极管
响应度
材料科学
光电子学
光学
光电二极管
波导管
单光子雪崩二极管
作者
Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai
出处
期刊:Optics Express
[The Optical Society]
日期:2022-03-28
卷期号:30 (7): 11288-11288
摘要
A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device shows a high primary responsivity of 0.96 A/W at the unit-gain voltage of -7.5 V. It has a large 3-dB bandwidth of >27 GHz and a low dark current of 1.8 µA at a reverse bias voltage of -13 V. When the present Ge/Si APD is used for receiving 25 Gbps data, the eye-diagram is open even for an optical power as low as -18 dBm. Furthermore, 50 Gbps data receiving is also demonstrated with an input optical power of -15 dBm, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems.
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