材料科学
晶体管
神经形态工程学
逆变器
电解质
制作
光电子学
数码产品
电压
频道(广播)
传播延迟
表征(材料科学)
电气工程
电子工程
纳米技术
计算机科学
电极
工程类
物理
医学
替代医学
病理
量子力学
机器学习
人工神经网络
作者
Fazel Zare Bidoky,C. Daniel Frisbie
标识
DOI:10.1021/acsami.2c01585
摘要
Electrolyte-gated transistors (EGTs) have emerging applications in physiological recording, neuromorphic computing, sensing, and flexible printed electronics. A challenge for these devices is their slow switching speed, which has several causes. Here, we report the fabrication and characterization of n-type ZnO-based EGTs with signal propagation delays as short as 70 ns. Propagation delays are assessed in dynamically operating inverters and five-stage ring oscillators as a function of channel dimensions and supply voltages up to 3 V. Substantial decreases in switching time are realized by minimizing parasitic resistances and capacitances that are associated with the electrolyte in these devices. Stable switching at 1-10 MHz is achieved in individual inverter stages with 10-40 μm channel lengths, and analysis suggests that further improvements are possible.
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