丝带
成核
硅
灵敏度(控制系统)
职位(财务)
GSM演进的增强数据速率
材料科学
动能
动力学
机械
热力学
复合材料
物理
经典力学
冶金
计算机科学
工程类
经济
电信
电子工程
财务
作者
Nojan Bagheri-Sadeghi,Victor Abolarin Fabiyi,Brian T. Helenbrook,Eunsu Paek
标识
DOI:10.1016/j.jcrysgro.2022.127038
摘要
Simulations of horizontal ribbon growth of silicon using a high-order finite element method were used to assess the sensitivity of results to the coefficients used in the solidification kinetics model. The position of the leading edge of the silicon sheet showed little sensitivity to the kinetic coefficient of roughened growth or step propagation. However, there was a significant difference in the leading edge position and maximum pull speed predictions between three correlations of two-dimensional nucleation of silicon proposed in the literature. The deviation between the results using the three correlations increased with increasing pull speed. The significant sensitivity of results to two-dimensional nucleation coefficient indicates the importance of accurate modeling of the two-dimensional nucleation for horizontal ribbon growth of silicon and the possibility of using HRG experiments to help improve models of two-dimensional nucleation.
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