极高频率
宽带
光电子学
材料科学
联轴节(管道)
物理
光学
冶金
作者
Guangxu Shen,Haitao Ma,Xiyao Wang,Feng Xu,Haoshen Zhu
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-01-02
卷期号:70 (6): 1891-1895
被引量:10
标识
DOI:10.1109/tcsii.2022.3233367
摘要
This brief proposes a wideband millimeter-wave (mm-wave) single-pole single-throw (SPST) switch using strong mutual coupling. For on-chip switches, it is very challenging to realize wide bandpass characteristics, especially in mm-wave bands. To address this issue, a wideband switch topology using strong mutual coupling has been introduced, based on which the fractional bandwidth of SPST switch can be easily expanded to over 80%. In addition, the coupling structure using coupled lines is investigated to realize strong mutual coupling. For demonstration, one 20-44.8 GHz switch with two transmission poles (TPs) is designed and fabricated in 100-nm GaN-on-Si. Low ON-state minimum insertion loss of 0.62 dB, preferable return losses better than −20 dB, and small chip size of 0.165 are realized, respectively.
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