Ultra-high photoresponsive photodetector based on ReS2/SnS2 heterostructure

Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance. The response speed of single ReS 2 photodetector is slow exceptionally, the heterostructure could improves the response speed of ReS 2 -based photodetector, but the photodetectors responsivity is reduced greatly, which restricts the development of ReS 2 . In this paper, a vertically structured ReS 2 /SnS 2 van der Waals heterostructure photodetectors is prepared, using ReS 2 as the transport layer and SnS 2 as the light absorbing layer to regulate the channel current. The device has an ultra-high photoconductive gain of 10 10 , which exhibits an ultra-high responsivity of 4706 A/W under 365-nm illumination and response speed in seconds, and has an ultra-high external quantum efficiency of 1.602×10 6 % and a high detectivity of 5.29×10 12 jones. The study for ReS 2 -based photodetector displays great potential for developing future optoelectronic devices.