一氧化硅
硅
铬
材料科学
一氧化碳
氧化物薄膜晶体管
退火(玻璃)
氧化物
氧化硅
电阻率和电导率
冶金
光电子学
化学工程
纳米技术
薄膜晶体管
电气工程
工程类
氮化硅
图层(电子)
作者
Jing Wen,Wei Hua,QingKun Gong,Bing Wang
标识
DOI:10.1166/jno.2022.3224
摘要
Chromium silicon monoxide has received considerable interest due to its applications as resistor. To deeply explore the key factors that determine the electro-thermal properties of chromium silicon monoxide films, a variety of chromium silicon monoxide films were prepared on glass and silicon substrates for different deposition conditions. The electrical resistivities of the chromium silicon monoxide films were found to strongly depend on the film thickness, atomic proportion of silicon oxide, and annealing temperature, and reducing the atomic proportion of silicon oxide can effectively suppress its resistivity variation for different temperature. In this case, choosing smaller atomic proportion of silicon oxide can greatly enhance the life stability of the chromium silicon oxide films. Based on the measured data, a chromium silicon monoxide film with the optimized thickness, electrical resistivity, and thermal conductivity, are fabricated, and its influence on the physical performances of the electrical memory is also assessed.
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