数码产品
基质(水族馆)
材料科学
纳米技术
硅
外延
异质结
工程物理
光电子学
电气工程
工程类
图层(电子)
海洋学
地质学
作者
Jui‐Han Fu,Yichen Cai,Jie Shen,Hiroya Sugisaki,Kazuyoshi Nanjo,Kun-Hin To,Kevin C.‐W. Wu,Yu Han,Lain‐Jong Li,Vincent Tung
出处
期刊:Matter
[Elsevier]
日期:2023-07-01
卷期号:6 (7): 2136-2152
标识
DOI:10.1016/j.matt.2023.05.034
摘要
Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer the tantalizing potential for pushing technology nodes below 1 nm. However, their scalable adoption for non-silicon (Si) electronics has been challenging. Achieving the lab-to-fab transition of 2D TMDs requires disruptive innovations in upscalable epitaxy growth, reaction mechanisms, defect passivation, and high-throughput manufacturing paradigms. This perspective discusses the emerging step-directed epitaxy, which begins with low steps and exploits the surface reconstruction of photolithographically defined channels, affording arrays of nanoribbons with widths approaching those needed for digital electronics applications. An energy-minimized, structured substrate-epilayer configuration is established. Notably, using these energetically favorable steps as catalytically active sites could have profound implications for membrane science, water desalination, radiative cooling, and lithium extraction industries. Finally, leveraging the power of artificial intelligence (AI), the upscale production of edge-directed epitaxy growth of single-crystal 2D TMDs can be accelerated, leading to their widespread adoption in non-Si electronics and other industries.
科研通智能强力驱动
Strongly Powered by AbleSci AI