单事件翻转
心烦意乱
中子
中断
事件(粒子物理)
软错误
静态随机存取存储器
中子辐照
核物理学
计算机科学
材料科学
物理
核工程
嵌入式系统
计算机硬件
工程类
电子工程
天体物理学
微控制器
机械工程
作者
Terrence F. Deaton,Michael J. Tostanoski,Michael K. Peters,Kristianto Hartojo,Gerard Lachiewicz,Travis Z. Fullem
标识
DOI:10.1109/redw61050.2023.10265825
摘要
Results of neutron induced single event upset testing of the Infineon (Cypress) FM25CL64B-GA 64Kbit (8Kx8) Serial FRAM are described for 14-MeV and moderated 14-MeV environments. Five samples were irradiated with a 14-MeV neutron source. The units were tested after being irradiated statically as well as under bias using multiple combinations of continual read and write/read loops and using a variety of bit patterns. Results for single event functional interrupt (SEFI) and single event upset (SEU) errors are presented along with cross section data and soft error rates.
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