原子层沉积
三元运算
氧化物
吸附
沉积(地质)
化学
羟基自由基
图层(电子)
红外光谱学
化学工程
无机化学
材料科学
物理化学
有机化学
激进的
古生物学
沉积物
计算机科学
工程类
生物
程序设计语言
作者
S.H. Lee,Seunggi Seo,Woo‐Jae Lee,Wontae Noh,Se‐Hun Kwon,Il‐Kwon Oh,Hyungjun Kim
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2023-10-04
卷期号:41 (6)
被引量:1
摘要
Atomic layer deposition (ALD) of multicomponent materials is challenging because the growth characteristics often deviate from what is expected due to the difference in surface characteristics of heterogeneous and single materials, resulting in undesired thickness or properties. For metal oxides, the growth characteristics highly rely on the surface hydroxyl groups, which play a role as the reactive site. Thus, studying the reaction mechanism of a precursor on hydroxyl-terminated heterogeneous surfaces is important for understanding the nonideal growth of ternary oxide. Here, we investigated the correlation between hydroxyl and the growth of ALD TiSiOx depending on temperature, analyzing infrared spectra, and chemical compositions. The results show that large amounts of hydroxyl are detected in TiSiOx deposited at 100 °C, where the adsorption of H2O on Ti–O–Si bonds is favorable. It leads to higher growth per cycle (GPC) than the estimated value. In contrast, the hydroxyl disappears at 200 °C due to dehydroxylation, resulting in lower GPC. Differences in hydroxyl also influence the film density as revealed in x-ray reflection spectra, which is related to the film qualities (e.g., elastic modulus and dry etch rates). This work provides insight into how to control hydroxyl in the ALD of ternary oxides, which is susceptible to hydroxyl incorporation, leading to undesired growth characteristics.
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