材料科学
范德瓦尔斯力
半导体
电阻器
光电子学
异质结
神经形态工程学
薄膜
电导
纳米技术
突触
凝聚态物理
人工神经网络
分子
物理
计算机科学
电压
量子力学
机器学习
神经科学
生物
作者
Gunho Moon,Seok Young Min,Cheolhee Han,Suk‐Ho Lee,Heonsu Ahn,Seung‐Young Seo,Feng Ding,Seyoung Kim,Moon‐Ho Jo
标识
DOI:10.1002/adma.202203481
摘要
A new type of atomically thin synaptic network on van der Waals (vdW) heterostructures is reported, where each ultrasmall cell (≈2 nm thick) built with trilayer WS2 semiconductor acts as a gate-tunable photoactive synapse, i.e., a photo-memtransistor. A train of UV pulses onto the WS2 memristor generates dopants in atomic-level precision by direct light-lattice interactions, which, along with the gate tunability, leads to the accurate modulation of the channel conductance for potentiation and depression of the synaptic cells. Such synaptic dynamics can be explained by a parallel atomistic resistor network model. In addition, it is shown that such a device scheme can generally be realized in other 2D vdW semiconductors, such as MoS2 , MoSe2 , MoTe2 , and WSe2 . Demonstration of these atomically thin photo-memtransistor arrays, where the synaptic weights can be tuned for the atomistic defect density, provides implications for a new type of artificial neural networks for parallel matrix computations with an ultrahigh integration density.
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