带偏移量
异质结
价带
偏移量(计算机科学)
半导体
材料科学
带隙
简并能级
X射线光电子能谱
兴奋剂
凝聚态物理
物理
原子物理学
光电子学
计算机科学
核磁共振
量子力学
程序设计语言
作者
Matthew J. Wahila,Zachary W. Lebens-Higgins,Nicholas F. Quackenbush,Junichi Nishitani,W. Walukiewicz,Per‐Anders Glans,Jing Guo,J. C. Woicik,K. M. Yu,Louis F. J. Piper
标识
DOI:10.1103/physrevb.91.205307
摘要
At covalent semiconductor interfaces, the band alignment is determined by the location of the band edges with respect to the charge neutrality level, but extension of this method to more ionic semiconductor systems requires further consideration. Using the charge neutrality level concept, a type-III (or broken band gap) band offset is predicted at the interface between $n$-type CdO and $p$-type SnTe. Employing hard x-ray photoelectron spectroscopy, we report on the chemical composition at the buried interface and the valence-band offset. Chemical intermixing at the interface between SnTe and CdO is found to be limited to $\ensuremath{\sim}2.5$ nm in our heterojunction samples. We measure a valence-band offset of 1.$95(\ifmmode\pm\else\textpm\fi{}0.15$ eV) irrespective of the layer configuration. Once the degenerate hole doping of the SnTe is considered, the measured band-edge offset agrees with the type-III offset predicted from alignment of the band edges with respect to the charge neutrality level of the semiconductors.
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