与非门
闪光灯(摄影)
缩放比例
计算机科学
逻辑门
数学
算法
物理
几何学
光学
作者
Krishna Parat,Akira Goda
标识
DOI:10.1109/iedm.2018.8614694
摘要
As the 2D NAND Flash scaling plateaued due to physical and electrical scaling limitations, 3D NAND emerged as a strong successor to continue the scaling trend. 3D NAND has rapidly achieved maturity and is already in the 3 rd and 4 th generation of technology with the total number of layers reaching 96 active layers. The improved cell characteristics of 3D NAND have enabled 4bits/cell capability, allowing for further bit density scaling. This paper describes some of the recent innovations in the 3D NAND technology and the key challenges ahead for continued scaling.
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