Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs

We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining characterer of these defects is not qualitatively changed by hydrogen Etude par cathodoluminescence dans des echantillons ou ces defauts ont ete introduits par deformation plastique a chaud: le caractere recombinant de ces defauts n'est pas qualitativement modifie par l'hydrogene