钻石
材料科学
无定形固体
透射电子显微镜
图层(电子)
碳纤维
X射线光电子能谱
硅
化学键
无定形碳
电子能量损失谱
结晶学
分析化学(期刊)
复合材料
纳米技术
化学
光电子学
化学工程
复合数
有机化学
工程类
色谱法
作者
Jianbo Liang,Satoshi Masuya,Makoto Kasu,Naoteru Shigekawa
摘要
Diamond/Si junctions have been achieved by surface activated bonding method without any chemical and heating treatments. Bonded interfaces were obtained that were free from voids and mechanical cracks. Observations by using transmission electron microscopy indicated that an amorphous layer with a thickness of ∼20 nm across the bonded interface was formed, and no structural defects were observed at the interface. The amorphous layer of the diamond side was confirmed to be the mixture of sp2 and sp3 carbons by electron energy loss spectroscopy analyzation. The sp3/(sp2 + sp3) ratio estimated from the X-ray photoemission spectra decreased from 53.8% to 27.5%, while the relative intensity of sp2 increased from 26.8% to 72.5% after the irradiation with Ar fast beam which should be predominantly attributable to the diamond-graphite conversion.
科研通智能强力驱动
Strongly Powered by AbleSci AI