光刻胶
聚合物
单体
光敏性
基质(化学分析)
材料科学
蚀刻(微加工)
平版印刷术
光刻
抵抗
分辨率(逻辑)
化学工程
纳米技术
光电子学
复合材料
计算机科学
人工智能
工程类
图层(电子)
出处
期刊:Photographic Science and Photochemistry
日期:2005-01-01
摘要
This paper discuss the preparation technology of 193 nm photoresist from the structure design of matrix polymer,the synthetic technology of monomer and of matrix polymer, the evaluation of photo-acid generator and prescription research. Various suitable monomers and various structural matrix polymers were synthesized, a plenty of formulation research was carried out and the best formulation was sieved. The photoresist sample prepared was evaluated by SEMATECH. Its best resolution is 0.1 μm, the minimun exposure dose is 26 mJ/cm2;it has not only excellent resolution and photosensitivity,but also good adhesiveness and anti-dry etching.
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