High-performance β-Ga2O3 thickness dependent solar blind photodetector

Gallium oxide (Ga 2 O 3 ) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga 2 O 3 films by pulsed laser deposition. β-Ga 2 O 3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga 2 O 3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga 2 O 3 in the field of UV detection.