Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Abstract An AMOLED panel using hybrid backplane technology based on p‐type low temperature polycrystalline silicon (p‐LTPS) and n‐type indium–gallium–zinc–oxide (n‐IGZO) thin‐film transistors (TFTs) has been successfully manufactured. New pixel and Gate‐on‐Array (GOA) circuits were designed and fabricated using this technology. GOA with CMOS inverter is realized by utilizing both IGZO and p‐LTPS. The hybrid backplane AMOLED panel can operate between 1 and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.