X射线光电子能谱
材料科学
铪
光电发射光谱学
分析化学(期刊)
锆
光谱学
铁电性
氧化物
光电子学
核磁共振
化学
电介质
物理
冶金
量子力学
色谱法
作者
Melanie A. Jenkins,Konner E. K. Holden,Sean W. Smith,Michael T. Brumbach,Michael David Henry,Conan Weiland,J. C. Woicik,Samantha T. Jaszewski,Jon Ihlefeld,John F. Conley
标识
DOI:10.1021/acsami.0c17729
摘要
Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measurement of the energy barriers between various metal electrodes (Pt, Au, Ta, TaN, Ti/Pt, Ni, Al) and hafnium zirconium oxide (Hf0.58Zr0.42O2, HZO) using internal photoemission (IPE) spectroscopy. Results are compared with valence band offsets determined using the three-sample X-ray photoelectron spectroscopy (XPS) as well as the two-sample hard X-ray photoelectron spectroscopy (HAXPES) techniques. Both XPS and IPE indicate roughly the same dependence of the HZO barrier on metal work function with a slope of 0.8 ± 0.5. XPS and HAXPES-derived barrier heights are on average about 1.1 eV smaller than barrier heights determined by IPE, suggesting the presence of negative charge in the HZO.
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