Optimizing CNTFET design parameters using the Taguchi method for high-performance and low-power applications

The features of CNT (Nanotube Carbon) are fascinating to study due to their unique structural and electrical capabilities. The small structure of the CNT in Field-Effect Transistor technology can produce a smaller device with a better performance. In this work, the Taguchi method had been implemented to optimize the Carbon Nanotube Field-Effect Transistor (CNTFET). The Minitab 19 software had been used to carry out the Taguchi method analysis. Three design parameters (diameter of CNT, pitch and the number of CNT) with three different sizes each had been chosen to improve the CNTFET capabilities. L27 orthogonal array and signal-to-noise (SNR) was used to collect and analyze the data. The result from the Taguchi method was validated by using ANOVA. The analysis results displayed the best combination of the three design parameters that produce the optimum performance in terms of high power and low power application. The study showed that the most dominant design parameter that affects the CNTFET’s current characteristics is the diameter of CNT with 59.93%, 96.15% and 99.14% towards on-current (Ion), off-current (Ioff) and current ratio (Ion/Ioff), respectively. By identifying the most dominant structure in CNTFET, the device can be further optimized. Eventually, the CNTFET devices in terms of high power and low power application can be enhanced.