材料科学
掺杂剂
电介质
态密度
密度泛函理论
光电子学
兴奋剂
折射率
光子学
凝聚态物理
钛
物理
量子力学
冶金
作者
Parveen Akhtar,Minhaj Ahmad Khan
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2021-12-01
卷期号:96 (12): 125878-125878
被引量:3
标识
DOI:10.1088/1402-4896/ac437b
摘要
Abstract The novelty of the Molybdenum disulfide (MoS 2 ) emerges owing to its opportunity to replace graphene and Si technology. In order to explore the great potential of the MoS 2 in current technology, its doping with the titanium (Ti) is performed using the first principle calculations. The exchange and correlation effects are approximated using the Perdew–Burke–Ernzerhof, generalized gradient approximation (PBE-GGA) as employed in the Wien2k code. The Ti atoms substitute the Mo atoms and different concentrations (3.7%, 5.55%, 12.5%) are computationally realized in the current study. A review of the partial density of states (PDOS) and total density of states (TDOS) suggest a remarkable contribution of Ti 3 d -states while these dopant states appreciably participate in tuning the electronic properties of Ti doped MoS 2 (Ti:MoS 2 ). A blueshift in the absorption spectrum is noticed along with increase in Ti concentrations which leads to its potential uses in the high energy visible optoelectronic applications. Moreover, an increase in dielectric constant and refractive index is observed which further extends the uses of the proposed material (Ti:MoS 2 ) in the fields of photonic, photodetectors, optics, and photosensing applications.
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