神经形态工程学
记忆电阻器
电阻随机存取存储器
非易失性存储器
闪光灯(摄影)
CMOS芯片
非易失性随机存取存储器
计算机科学
相变存储器
闪存
计算
记忆晶体管
电气工程
电子工程
材料科学
半导体存储器
计算机存储器
计算机硬件
光电子学
电压
纳米技术
物理
工程类
内存刷新
人工神经网络
人工智能
光学
算法
图层(电子)
作者
Wei Wang,Loai Danial,Eric Herbelin,Barak Hoffer,Batel Oved,Tzofnat Greenberg-Toledo,Evgeny Pikhay,Yakov Roizin,Shahar Kvatinsky
摘要
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $\mu$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.
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