Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

When stacked into heterostructures, layered transition metal dichalcogenides (TMDCs) exhibit peculiar electronic and optical properties that may differ substantially from those of their constituents and that largely depend on the level alignment. For example, the MoTe 2 /WSe 2 heterobilayer exhibits a type I band lineup, which can be exploited in emitting devices but limits charge separation. In this first‐principle study based on density functional theory and many‐body perturbation theory, strain is proposed as an effective means to make MoTe 2 /WSe 2 a type II heterostructure. By exploring several configurations where biaxial strain is applied to either or both monolayers, the top of the valence band and the bottom of the conduction band are found at different points in k‐space leading to an indirect‐to‐direct bandgap transition when the lattice constant of WSe 2 is expanded by 3.2% or more. In terms of optical properties, all considered systems exhibit a first dark excitation, consistently shifting in energy with the direct electronic gap, while the absorption onset does not vary significantly with strain. Our findings suggest strain as a powerful tool for fine tuning the electronic and optical properties of TMDC heterostructures while preserving their fundamental characteristics, thus opening new avenues for designing optoelectronic applications.