Realizing p-type InSb with enhanced thermoelectric performance via Cd doping

InSb is a promising mid-temperature thermoelectric material, and its n-type thermoelectric properties have been widely studied. For thermoelectric device applications, it is necessary to have p-type counterparts. Here, we report the realization of p-type InSb with enhanced thermoelectric performance via Cd doping. A high-power factor of 1.91 × 10−3 W m−1 K−2 is obtained in p-type In0.93Cd0.07Sb at 723 K due to the increased carrier concentration. Moreover, the lattice thermal conductivity is decreased to 2.0 W m−1 K−1 owing to the significant multiscale phonon scattering and the suppressed bipolar diffusion effect. Ultimately, the peak zT value of 0.40 is achieved at 723 K in p-type In0.93Cd0.07Sb, which surpasses most contemporary p-type InSb materials. This study demonstrates a simple strategy for fabricating p-type InSb with high performance and holds promise in advancing the development of InSb-based TE devices.