光电子学
材料科学
极性(国际关系)
光伏系统
光电二极管
光强度
光电效应
肖特基势垒
肖特基二极管
调制(音乐)
雷
波长
光学
化学
物理
电气工程
二极管
工程类
细胞
生物化学
声学
作者
Amin Abnavi,Ribwar Ahmadi,Hamidreza Ghanbari,Deji Akinwande,Michael M. Adachi
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-12-07
卷期号:18 (50): 34147-34157
被引量:13
标识
DOI:10.1021/acsnano.4c10392
摘要
Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS2 Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS2/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS2 channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.
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