材料科学
薄膜晶体管
AMOLED公司
原子层沉积
光电子学
有源矩阵
有机发光二极管
晶体管
无定形固体
二极管
薄膜
纳米技术
图层(电子)
电气工程
电压
化学
结晶学
工程类
作者
Seong Hun Yoon,Jaehun Cho,Iaan Cho,Min Jae Kim,Jae Seok Hur,Sang-Weon Bang,H. J. Lee,Jong Uk Bae,Jiyoung Kim,Bonggeun Shong,Jae Kyeong Jeong
标识
DOI:10.1002/smtd.202301185
摘要
Amorphous IGZO (a-IGZO) thin-film transistors (TFTs) are standard backplane electronics to power active-matrix organic light-emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold swing (SS) (≤ 0.1 V/decade), necessitating costly external compensation for IGZO transistors. For mid-size mobile applications such as OLED tablets and notebooks, it is important to ensure controllable SS value (≥ 0.3 V/decade). In this study, a conversion mechanism during plasma-enhanced atomic layer deposition (PEALD) is proposed as a feasible route to control the SS. When a pulse of a diethylzinc (DEZn) precursor is exposed to the M2 O3 (M = In or Ga) surface layer, partial conversion of the underlying M2 O3 to ZnO is predicted on the basis of density function theory calculations. Notably, significant distinctions between In-Ga-Zn (Case I) and In-Zn-Ga (Case II) films are observed: Case II exhibits a lower growth rate and larger Ga/In ratio. Case II TFTs with a-IGZO (subcycle ratio of In:Ga:Zn = 3:1:1) show reasonable SS values (313 mV decade-1 ) and high mobility (µFE ) of 29.3 cm2 Vs-1 (Case I: 84 mV decade-1 and 33.4 cm2 Vs-1 ). The rationale for Case II's reasonable SS values is discussed, attributing it to the plausible formation of In-Zn defects, supported by technology computer-aided design (TCAD) simulations.
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