Performance evaluation of p-type Cr2O3 thin films grown by reactive DC magnetron sputtering for Schottky diode applications

Abstract In this study, we present a comprehensive investigation into the impact of combined oxygen and argon flow rates on the physical properties of Cr 2 O 3 thin films produced via reactive DC magnetron sputtering. Additionally, we explore the influence of oxygen flow rate on various aspects, including structural, morphological, optical, chemical, and electrical characteristics of the sputtered Cr 2 O 3 thin films. Our analysis, based on XRD results, reveals the polycrystalline nature of the films. Surface morphology was examined through scanning electron microscopy. Optical analysis indicates a band gap ranging from 2.70 eV to 2.99 eV for the films. X-ray photoelectron spectroscopy analysis shows the splitting of Cr 2p core spectra into Cr 2p 3/2 and Cr 2p 1/2 domains within the range of 573 eV to 585 eV, alongside the presence of satellite peaks. Moreover, extracted electrical properties reveal the p-type conductivity of the deposited Cr 2 O 3 thin film under various oxygen flow rates. Furthermore, we fabricate and characterize an ITO/p-Cr 2 O 3 /Al Schottky diode to provide additional insights into p-Cr 2 O 3 /Al Schottky diodes. Overall, this study contributes valuable insights and enhances our understanding of Cr 2 O 3 thin film properties, particularly in the context of semiconductor devices like Schottky diodes.