Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology

A full monolithic integration in multi-terminal SiC dies of a generic H-bridge power converter (800V/10A) consisting of dual N-type vertical MOSFET switches within only two multi-terminal chips is proposed. Innovative two multi-terminal monolithic power SiC-chips are introduced and studied by 2D Sentaurus™ simulations. The first one integrates the high-side row switches of the bridge and the second one integrates the low-side row switches. Static and dynamic operating modes were validated through 2D-Mixed-Mode simulations. Main new process bricks allowing back-side insulating trenches based on plasma combined with photo-electrochemical etching are experimentally evaluated for the first time on power device SiC wafer.