拓扑绝缘体
凝聚态物理
磁性
反铁磁性
相图
拓扑序
铁磁性
双层
拓扑(电路)
量子
量子反常霍尔效应
带隙
联轴节(管道)
物理
材料科学
相(物质)
量子霍尔效应
电子
化学
量子力学
组合数学
生物化学
冶金
膜
数学
作者
Yaling Zhang,Ying-Ying Wang,Wenjia Yang,Huisheng Zhang,Jianfeng Jia
摘要
Similar to the magnetic topological insulator of MnBi2Te4, recent studies have demonstrated that VBi2Te4 is also an ideal candidate to explore many intriguing quantum states. Different from the strong interlayer antiferromagnetic (AFM) coupling in layered MnBi2Te4, based on first-principles calculations, we find that the energy difference between AFM and ferromagnetic (FM) orders in layered VBi2Te4 is much smaller than that of MnBi2Te4. Specifically, it is found that the interlayer FM coupling can be readily achieved by applying strain. Further electronic band structures reveal that the VBi2Te4 bilayer is a time-reversal symmetry broken quantum spin Hall insulator with a spin Chern number of CS = 1, which is essentially different from the QAH state with a Chern number of C = 1 in the MnBi2Te4 bilayer. Most strikingly, the topological states of the magnetic VBi2Te4 bilayer can be well tuned by strain, whose topological phase diagram is mapped out as a function of strain by employing continuum model analyses. All of these results indicate that the layered VBi2Te4 not only enriches the family of magnetic topological materials, but also provides a promising platform to explore more exotic quantum phenomena.
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