Effect of annealing residual stress on mobility of TSV vertical switch

The effect of internal radial stress generated during the annealing process on the mobility of through-silicon via (TSV) vertical switch are analyzed in detail, by employing finite element software ANSYS and orthogonal experimental design method. The results show that, the TSV diameter has the largest effect on the mobility of the TSV vertical switch, while the equilateral triangle array produces the smallest effect of stress at the same distance.